Correlation between band tall depth and potential originated by impuritiesin n-type and weakly compensated semiconductors

Authors
Fonthal, G Moros, J
Citation
G. Fonthal et J. Moros, Correlation between band tall depth and potential originated by impuritiesin n-type and weakly compensated semiconductors, REV MEX FIS, 47(1), 2001, pp. 50-53
Citations number
27
Categorie Soggetti
Physics
Journal title
REVISTA MEXICANA DE FISICA
ISSN journal
0035001X → ACNP
Volume
47
Issue
1
Year of publication
2001
Pages
50 - 53
Database
ISI
SICI code
0035-001X(200102)47:1<50:CBBTDA>2.0.ZU;2-7
Abstract
The doped semiconductors band tail Ea and the potential by ionized impuriti es E-p were correlated for n-type and weakely compensated samples of Ge, Si , GaP and CdS. Results showed a lineal bebavior with slope of 1.417 and ord enate intersection close to zero. The slope was very close to waited root2, because E-p is a rms potential.