Monte Carlo analysis of the influence of dc conditions on the upconversionof generation-recombination noise in semiconductors

We present a study of the influence of nonlinear velocity-field characteris tics of semiconductors on the upconversion of low-frequency generation-reco mbination noise to high frequencies. An ensemble Monte Carlo simulation is used for the calculations. When a periodic electric field of large amplitud e is applied to the semiconductor we observe the generation of harmonics in the current response, and the upconversion of generation-recombination noi se as sidebands around these harmonics. By varying the de value of the appl ied electric field we obtain the main result of this work: upconverted nois e is dramatically reduced when the sample is biased in the quasi-saturation region.