Optical properties of beta-In2S3 and beta-In2S3 : Co2+ single crystals

Citation
Sh. Choe et al., Optical properties of beta-In2S3 and beta-In2S3 : Co2+ single crystals, SEMIC SCI T, 16(2), 2001, pp. 98-102
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
2
Year of publication
2001
Pages
98 - 102
Database
ISI
SICI code
0268-1242(200102)16:2<98:OPOBAB>2.0.ZU;2-9
Abstract
beta -In2S3 and beta -In2S3:Co2+ single crystals were grown by the chemical transport reaction method using In2S3, S, and ZnS as starting materials an d (ZnCl2 + I-2) as a transport agent. The single crystals crystallized into a tetragonal structure. The indirect optical energy band gaps of the singl e crystals at 298 K were found to be 2.240 eV and 1.814 eV for beta -In2S3 and beta -In2S3:Co2+, respectively. The direct optical energy band gaps wer e found to be 2.639 eV and 2.175 eV for beta -In2S3 and beta -In2S3:Co2+, r espectively. Impurity optical absorption peaks were observed for the beta - In2S3:Co2+ single crystal. These impurity absorption peaks were assigned, b ased on the crystal field theory, to the electron transitions between the e nergy levels of the Co2+ ion sited in T alpha symmetry.