Realization of polycrystalline silicon magnetic sensors

The aim of this study is to develop magnetic sensors (Hall generators) that can be realized on large area glass substrates and used as large position sensor. The magnetic sensor is constituted of particular polycrystalline si licon thin-film transistors that allows obtaining a significant Hall voltag e induced by a magnetic field. The sensitivity of the magnetic cell, as wel l as the power dissipation depend on the gate and drain voltages. Two diffe rent structures with active layer lightly doped or undoped are studied. The highest measured sensitivity is about 20 mV/T with a low power dissipation (<2 mW). (C) 2001 Elsevier Science B.V. All rights reserved.