The localized gas discharge etching of materials

Citation
Av. Abramov et al., The localized gas discharge etching of materials, TECH PHYS L, 27(2), 2001, pp. 108-109
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
2
Year of publication
2001
Pages
108 - 109
Database
ISI
SICI code
1063-7850(2001)27:2<108:TLGDEO>2.0.ZU;2-2
Abstract
It is demonstrated that a gas discharge can be localized between separate e lements on the surface of electrodes with a preset geometry. The main chara cteristics of the localized discharge have been studied and the forms of th is discharges are established. Using the localized discharge in a fluorine- containing gas medium, size-controlled etching of silicon and silicon dioxi de with a resolution of 100 mum was performed without mask application. (C) 2001 MAIK "Nauka/Interperiodica".