A new method for Auger depth profiling, employing a difference in the escap
e depth of the Auger electrons emitted at nearly normal and glancing angles
, is proposed and verified. The depth profiles obtained under optimum ion s
puttering conditions with registration of the glancing Auger electrons exhi
bit a subnanometer (0.8 nm) depth resolution. This technique was successful
ly applied to the study of high-quality InxGa1 - xAs/GaAs heterostructures
with quantum wells grown by the method of metalorganic chemical vapor depos
ition. (C) 2001 MAIK "Nauka/Interperiodica".