Subnanometer resolution in depth profiling using glancing Auger electrons

Citation
Mn. Drozdov et al., Subnanometer resolution in depth profiling using glancing Auger electrons, TECH PHYS L, 27(2), 2001, pp. 114-117
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
2
Year of publication
2001
Pages
114 - 117
Database
ISI
SICI code
1063-7850(2001)27:2<114:SRIDPU>2.0.ZU;2-T
Abstract
A new method for Auger depth profiling, employing a difference in the escap e depth of the Auger electrons emitted at nearly normal and glancing angles , is proposed and verified. The depth profiles obtained under optimum ion s puttering conditions with registration of the glancing Auger electrons exhi bit a subnanometer (0.8 nm) depth resolution. This technique was successful ly applied to the study of high-quality InxGa1 - xAs/GaAs heterostructures with quantum wells grown by the method of metalorganic chemical vapor depos ition. (C) 2001 MAIK "Nauka/Interperiodica".