The effect of adsorption complexes on the electron spectrum and luminescence of porous silicon

Effects of the surface atomic structures on the electron spectrum and lumin escent properties of porous silicon (por-Si) were studied by methods of pho toluminescence spectroscopy, UV photoelectron spectroscopy, and Fourier-tra nsform IR spectroscopy. An analysis of evolution of the por-Si characterist ics in the course of thermal treatment in vacuum revealed a correlation bet ween the photoluminescence spectrum and intensity, on the one hand, and the electron spectrum and surface atomic structure, on the other hand. The the rmodesorption of adsorbate from por-Si leads to atomic rearrangements on th e sample surface, which is accompanied by changes in the electron structure and, hence, in the luminescent properties of the material. (C) 2001 MAIK " Nauka/Interperiodica".