CHARGE-CARRIER LIFETIME IN HG1-XCDXTE (X=0.22) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

Authors
VOITSEKHOVSKII AV DENISOV YA KOKHANENKO AP VARAVIN VS DVORETSKII SA LIBERMAN VT MIKHAILOV NN SIDOROV YG
Citation
Av. Voitsekhovskii et al., CHARGE-CARRIER LIFETIME IN HG1-XCDXTE (X=0.22) STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Semiconductors, 31(7), 1997, pp. 655-657
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
7
Year of publication
1997
Pages
655 - 657
Database
ISI
SICI code
1063-7826(1997)31:7<655:CLIH(S>2.0.ZU;2-D
Abstract
Measurements of the charge carrier lifetime in epitaxial structures ba sed on narrow-gap Hg1-xCdxTe (x=0.22), grown by molecular-beam epitaxy with pulsed excitation using radiation at different wavelengths, are reported. It is shown that in p-type epitaxial films the lifetime is d etermined by the Auger recombination mechanism at temperatures corresp onding to the impurity conductivity, and for n-type epitaxial films re combination via local centers is characteristic.