EFFECT OF SUCCESSIVE IMPLANTATION OF AG-XTE CRYSTALS((CU+) AND XE+ IONS ON THE RECOMBINATION PROPERTIES OF CDXHG1)

The effect of successive double implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1-xTe (0.2<x<0.3) crystals has been investigated, It is shown that after implantation of ions of one chemical element, followed by diffusion thermal annealing at temperat ures below 150-200 K, recombination through local levels lying 30+/-5 meV below the conduction band bottom dominates. Successive double impl antation of Ag+(Cu+) and Xe+ ions followed by diffusion thermal anneal ing changes the course of the temperature dependence of the lifetime o f the nonequilibrium charge carriers. It was determined that for CdxHg 1-xTe crystals with x = 0.20-0.25 in the temperature interval 700-200 K the lifetime of the nonequilibrium charge carriers is low (tau<0.15 mu s) and does not depend on die temperature. For CdxHg1-xTe crystals with x similar or equal to 0.3 recombination of nonequilibrium charge carriers occurs through two types of levels: in the temperature range 140-200 K - deep levels E(t1)similar or equal to E-c-51 meV and at low er temperatures (77-140 K)- through shallower levels E(t2)similar or e qual to E-c-(16+/- 2) meV. (C) 1997 American Institute of Physics.