ELECTRON-HOLE SCATTERING IN P-TYPE SILICON WITH A LOW CHARGE-CARRIER INJECTION LEVEL

Authors
MNATSAKANOV TT POMORTSEVA LI SHUMAN VB
Citation
Tt. Mnatsakanov et al., ELECTRON-HOLE SCATTERING IN P-TYPE SILICON WITH A LOW CHARGE-CARRIER INJECTION LEVEL, Semiconductors, 31(7), 1997, pp. 707-709
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
7
Year of publication
1997
Pages
707 - 709
Database
ISI
SICI code
1063-7826(1997)31:7<707:ESIPSW>2.0.ZU;2-B
Abstract
A previously proposed method for determining the parameters of electro n-hole scattering in indirect-gap semiconductors is used to investigat e the properties of p-type silicon. Diode n(+)-p-p(+) structures were used for the measurements. The results obtained by us indicate that co mplete dragging of the minority electrons by the majority holes is pos sible, even at room temperature, in p-type material with doping levels N> 10(18) cm(-3). (C) 1997 American Institute of Physics.