A previously proposed method for determining the parameters of electro
n-hole scattering in indirect-gap semiconductors is used to investigat
e the properties of p-type silicon. Diode n(+)-p-p(+) structures were
used for the measurements. The results obtained by us indicate that co
mplete dragging of the minority electrons by the majority holes is pos
sible, even at room temperature, in p-type material with doping levels
N> 10(18) cm(-3). (C) 1997 American Institute of Physics.