CHARACTERISTIC FEATURES OF SILICON MULTIJUNCTION SOLAR-CELLS WITH VERTICAL P-N-JUNCTIONS

Authors
GUK EG NALET TA SHVARTS MZ SHUMAN VB
Citation
Eg. Guk et al., CHARACTERISTIC FEATURES OF SILICON MULTIJUNCTION SOLAR-CELLS WITH VERTICAL P-N-JUNCTIONS, Semiconductors, 31(7), 1997, pp. 726-727
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
7
Year of publication
1997
Pages
726 - 727
Database
ISI
SICI code
1063-7826(1997)31:7<726:CFOSMS>2.0.ZU;2-D
Abstract
A relatively simple technology (without photolithography) based on dif fusion welding and ion-plasma deposition of an insulating coating has been developed for fabricating multijunction silicon solar cells with vertical p-n junctions. The effective collection factor for such struc tures is independent of the wavelength of the incident light in the wa velength range lambda = 340-1080 nm. (C) 1997 American Institute of Ph ysics.