1 F NOISE IN STRONGLY DOPED N-TYPE GAAS UNDER BAND-BAND ILLUMINATION CONDITIONS/

Authors
DYAKONOVA NV LEVINSHTEIN ME RUMYANTSEV SL PASCAL F
Citation
Nv. Dyakonova et al., 1 F NOISE IN STRONGLY DOPED N-TYPE GAAS UNDER BAND-BAND ILLUMINATION CONDITIONS/, Semiconductors, 31(7), 1997, pp. 728-732
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
7
Year of publication
1997
Pages
728 - 732
Database
ISI
SICI code
1063-7826(1997)31:7<728:1FNISD>2.0.ZU;2-I
Abstract
The nature of 1/f noise, which appears in strongly doped n-type GaAs ( electron density n(0) similar or equal to 10(17) cm(-3)) under band-ba nd illumination, has been investigated by measuring the low-frequency noise under high geometric magnetoresistance conditions. It is shown t hat such noise is of a volume nature and is due to carrier number (and not mobility) fluctuations. It is shown experimentally for the first time that surface noise can be distinguished from volume noise by perf orming measurements under high geometric magnetoresistance conditions. (C) 1997 American Institute of Physics.