PHOTOLUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED PHOSPHORUS-DOPED SILICON

Authors
TERUKOV EI KUZNETSOV AN PARSHIN EO WEISER G KUEHNE H
Citation
Ei. Terukov et al., PHOTOLUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED PHOSPHORUS-DOPED SILICON, Semiconductors, 31(7), 1997, pp. 738-739
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
7
Year of publication
1997
Pages
738 - 739
Database
ISI
SICI code
1063-7826(1997)31:7<738:POEIAH>2.0.ZU;2-G
Abstract
The photoluminescence of erbium ions in phosphorus-doped a-Si:H films has been investigated. The observed increase in the Er photoluminescen ce with increasing defect density in the samples and the correlation o f the temperature variation of the Er photoluminescence and defect-ass ociated photoluminescence intensities are explained on the basis of a model of excitation of Er ions as a result of Auger recombination with defect participation. (C) 1997 American Institute of Physics.