EFFECT OF RADIATION ON THE CHARACTERISTICS OF MIS STRUCTURES CONTAINING RARE-EARTH-OXIDES

Citation
Yg. Fedorenko et al., EFFECT OF RADIATION ON THE CHARACTERISTICS OF MIS STRUCTURES CONTAINING RARE-EARTH-OXIDES, Semiconductors, 31(7), 1997, pp. 752-755
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
31
Issue
7
Year of publication
1997
Pages
752 - 755
Database
ISI
SICI code
1063-7826(1997)31:7<752:EOROTC>2.0.ZU;2-T
Abstract
The results of experimental studies of the effect of gamma-irradiation on the electrical properties of MIS structures containing the rare-ea rth oxides Y2O3, Dy2O3, Tb2O3, Gd2O3, and Lu2O3 are reported. The stat ic characteristics (current-voltage, capacitance-voltage) and dynamic characteristics (transient characteristics, diagrams of oscillatory re gimes) of the structures before and after irradiation with doses D=10( 4)-10(6) rad are examined. It is found that the irradiation dose D=10( 6) rad does not produce any substantial degradation of the characteris tics of the structures. The radiation-induced changes observed in the experimental samples are consistent with existing data for MIS structu res with SiO2 as the insulator. (C) 1997 American Institute of Physics .