Yg. Fedorenko et al., EFFECT OF RADIATION ON THE CHARACTERISTICS OF MIS STRUCTURES CONTAINING RARE-EARTH-OXIDES, Semiconductors, 31(7), 1997, pp. 752-755
The results of experimental studies of the effect of gamma-irradiation
on the electrical properties of MIS structures containing the rare-ea
rth oxides Y2O3, Dy2O3, Tb2O3, Gd2O3, and Lu2O3 are reported. The stat
ic characteristics (current-voltage, capacitance-voltage) and dynamic
characteristics (transient characteristics, diagrams of oscillatory re
gimes) of the structures before and after irradiation with doses D=10(
4)-10(6) rad are examined. It is found that the irradiation dose D=10(
6) rad does not produce any substantial degradation of the characteris
tics of the structures. The radiation-induced changes observed in the
experimental samples are consistent with existing data for MIS structu
res with SiO2 as the insulator. (C) 1997 American Institute of Physics
.