Epitaxial LiNbO3 thin films grown by pulsed laser deposition for optical waveguides

Authors
Balestrino, G Martellucci, S Medaglia, PG Paoletti, A Petrocelli, G Tebano, A Tucciarone, A Gelli, F Giorgetti, E Sottini, S Tapfer, L
Citation
G. Balestrino et al., Epitaxial LiNbO3 thin films grown by pulsed laser deposition for optical waveguides, APPL PHYS L, 78(9), 2001, pp. 1204-1206
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
9
Year of publication
2001
Pages
1204 - 1206
Database
ISI
SICI code
0003-6951(20010226)78:9<1204:ELTFGB>2.0.ZU;2-R
Abstract
We have grown good-quality epitaxial LiNbO3 thin films on (0001) sapphire s ubstrates using a pulsed laser deposition technique. The growth conditions permitted us to deposit c-axis oriented films avoiding the problem of the L iNb3O8 Li-deficient phase. The chemical composition of thin films was inves tigated by secondary ion mass spectrometry and resulted to coincide with th e target composition. Guided propagation was demonstrated at 632 and 488 nm with thin films (similar to 1200 Angstrom). (C) 2001 American Institute of Physics.