Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum-dot lasers are achieved by the application of an annealing and growth interrup tion step at 600 degreesC after the deposition of the dots. The transparenc y current is reduced to below 20 A/cm(2) at room temperature. The internal differential quantum efficiency is increased from below 50% to above 90% by improvement of the barrier material and subsequent reduction of leakage cu rrent. A peak power of 3.7 W at 1140 nm lasing wavelength in pulsed operati on at room temperature is demonstrated. (C) 2001 American Institute of Phys ics.