Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films

Citation
T. Makino et al., Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films, APPL PHYS L, 78(9), 2001, pp. 1237-1239
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
9
Year of publication
2001
Pages
1237 - 1239
Database
ISI
SICI code
0003-6951(20010226)78:9<1237:BGEBOM>2.0.ZU;2-J
Abstract
We describe the structural and optical properties of II-VI oxide alloys, Mg xZn1-xO and CdyZn1-yO, grown by pulsed-laser deposition. Single-phase alloy ed films of (Mg,Zn)O and (Cd,Zn)O with c-axis orientations were epitaxially grown on sapphire (0001) substrates. The maximum magnesium and cadmium con centrations (x = 0.33 and y = 0.07, respectively) were significantly larger than the thermodynamic solubility limits. The band gap energies systematic ally changed from 3.0 (y = 0.07) to 4.0 eV (x = 0.33) at room temperature. The photoluminescence peak energy deduced at 4.2 K could be tuned from 3.19 to 3.87 eV by using Cd0.07Zn0.93O and Mg0.33Zn0.67O at both ends, respecti vely. The lattice constants of the a axis were monotonically increasing fun ctions of the concentrations of both alloys. The exciton-phonon coupling st rength was determined in Cd0.01Zn0.99O grown on a lattice-matched ScAlMgO4 substrate. (C) 2001 American Institute of Physics.