Emission properties of an amorphous AlN : Cr3+ thin-film phosphor

Authors
Caldwell, ML Martin, AL Dimitrova, VI Van Patten, PG Kordesch, ME Richardson, HH
Citation
Ml. Caldwell et al., Emission properties of an amorphous AlN : Cr3+ thin-film phosphor, APPL PHYS L, 78(9), 2001, pp. 1246-1248
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
9
Year of publication
2001
Pages
1246 - 1248
Database
ISI
SICI code
0003-6951(20010226)78:9<1246:EPOAAA>2.0.ZU;2-U
Abstract
Chromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silico n (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure o f 10(-4) Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at similar to 1300 K for 30 min in a nitrogen atmosphere. Films activated in this manner exhibit intense cathodoluminescence and pho toluminescence emission. Spectral evidence demonstrates conclusively that t he luminescent centers are Cr3+ ions. (C) 2001 American Institute of Physic s.