SiGe-on-insulator prepared by wafer bonding and layer transfer for high-performance field-effect transistors

SiGe-on-insulator material was fabricated by wafer bonding and hydrogen-ind uced layer transfer techniques. The transferred SiGe layer is strain relaxe d and has a Ge content ranging from 15% to 25%. High-quality strained Si la yers were grown on the SiGe-on-insulator substrates by the UHV/chemical vap or deposition process at 550 degreesC. An electron mobility of 40 000 cm(2) /V s in a modulation-doped Si/SiGe heterostructure was achieved at 30 K on a SiGe-on-insulator substrate. (C) 2001 American Institute of Physics.