Magnetic and optical properties of GaMnN magnetic semiconductor

Microcrystalline Ga1-xMnxN samples with Mn content up to x = 0.005 were gro wn by an ammonothermal method and were studied using various techniques. X- ray diffraction showed characteristic diffraction lines for hexagonal GaN p hase mixed with a small contribution (<5%) from the Mn3N2 phase. Raman spec tra exhibited characteristic peaks of pure GaN and modes that could be asso ciated with Mn-induced lattice disorder. Electron spin resonance and magnet ization measurements were consistent with the dominant Mn2+(d(5)) configura tion of spin S = 5/2 which is responsible for the observed paramagnetic beh avior of the GaMnN material. (C) 2001 American Institute of Physics.