Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers

Citation
Q. Zou et al., Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers, APPL PHYS L, 78(9), 2001, pp. 1282-1284
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
9
Year of publication
2001
Pages
1282 - 1284
Database
ISI
SICI code
0003-6951(20010226)78:9<1282:IDPOLZ>2.0.ZU;2-#
Abstract
Improved dielectric properties of lead zirconate titanate (PZT) films depos ited on a variety of foils using buffer layers are reported. Foils include titanium, stainless steel, and nickel with LaNiO3(LNO) buffer layers which were prepared by sol-gel processing. High dielectric constant (330 for stai nless steel, 420 for titanium, and 450 for nickel foils), low dielectric lo ss (<2.2% for titanium and 8% for stainless steel), symmetric ferroelectric C-V characteristics and P-E curves were obtained. The LNO layers are shown to provide an effective diffusion barrier for Ni and Cr and to restrict ox ide layer formation (i.e., TiOx or NiOx) between the PZT film and the metal lic foils during annealing in air. (C) 2001 American Institute of Physics.