Q. Zou et al., Improved dielectric properties of lead zirconate titanate thin films deposited on metal foils with LaNiO3 buffer layers, APPL PHYS L, 78(9), 2001, pp. 1282-1284
Improved dielectric properties of lead zirconate titanate (PZT) films depos
ited on a variety of foils using buffer layers are reported. Foils include
titanium, stainless steel, and nickel with LaNiO3(LNO) buffer layers which
were prepared by sol-gel processing. High dielectric constant (330 for stai
nless steel, 420 for titanium, and 450 for nickel foils), low dielectric lo
ss (<2.2% for titanium and 8% for stainless steel), symmetric ferroelectric
C-V characteristics and P-E curves were obtained. The LNO layers are shown
to provide an effective diffusion barrier for Ni and Cr and to restrict ox
ide layer formation (i.e., TiOx or NiOx) between the PZT film and the metal
lic foils during annealing in air. (C) 2001 American Institute of Physics.