Electrochemical carbon nanotube field-effect transistor

Authors
Kruger, M Buitelaar, MR Nussbaumer, T Schonenberger, C Forro, L
Citation
M. Kruger et al., Electrochemical carbon nanotube field-effect transistor, APPL PHYS L, 78(9), 2001, pp. 1291-1293
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
9
Year of publication
2001
Pages
1291 - 1293
Database
ISI
SICI code
0003-6951(20010226)78:9<1291:ECNFT>2.0.ZU;2-V
Abstract
We explore the electric-field effect of carbon nanotubes (NTs) in electroly tes. Due to the large gate capacitance, Fermi energy (E-F) shifts of order +/-1 V can be induced, enabling to tune NTs from p to n-type. Consequently, large resistance changes are measured. At zero gate voltage, the NTs are h ole-doped in air with parallel toE(F)parallel to approximate to 0.3-0.5 eV, corresponding to a doping level of approximate to 10(13) cm(-2). Hole-dopi ng increases in the electrolyte. (C) 2001 American Institute of Physics.