Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100)

Authors
Ma, WQ Notzel, R Trampert, A Ramsteiner, M Zhu, HJ Schonherr, HP Ploog, KH
Citation
Wq. Ma et al., Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100), APPL PHYS L, 78(9), 2001, pp. 1297-1299
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
9
Year of publication
2001
Pages
1297 - 1299
Database
ISI
SICI code
0003-6951(20010226)78:9<1297:SQWFBE>2.0.ZU;2-Z
Abstract
Long and fairly uniform quantum wire arrays have been fabricated by the gro wth of (In,Ga)As/GaAs multilayer structures. The structural properties of t he quantum wires are characterized by atomic force microscopy, x-ray diffra ctometry, and transmission electron microscopy. The lateral carrier confine ment in the quantum wires is confirmed by linear polarization dependent pho toluminescence (PL) and magneto-PL measurements. (C) 2001 American Institut e of Physics.