III-nitride blue microdisplays

Citation
Hx. Jiang et al., III-nitride blue microdisplays, APPL PHYS L, 78(9), 2001, pp. 1303-1305
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
9
Year of publication
2001
Pages
1303 - 1305
Database
ISI
SICI code
0003-6951(20010226)78:9<1303:IBM>2.0.ZU;2-E
Abstract
Prototype blue microdisplays have been fabricated from InGaN/GaN quantum we lls. The device has a dimension of 0.5 x 0.5 mm(2) and consists of 10 x 10 pixels 12 mum in diameter. Emission properties such as electroluminescence spectra, output power versus forward current (L-I) characteristic, viewing angle, and uniformity have been measured. Due to the unique properties of I II-nitride wide-band-gap semiconductors, microdisplays fabricated from III nitrides can potentially provide unsurpassed performance, including high-br ightness/resolution/contrast, high-temperature/high-power operation, high s hock resistance, wide viewing angles, full-color spectrum capability, long life, high speed, and low-power consumption, thus providing an enhancement and benefit to the present capabilities of miniature display systems. (C) 2 001 American Institute of Physics.