Prototype blue microdisplays have been fabricated from InGaN/GaN quantum we
lls. The device has a dimension of 0.5 x 0.5 mm(2) and consists of 10 x 10
pixels 12 mum in diameter. Emission properties such as electroluminescence
spectra, output power versus forward current (L-I) characteristic, viewing
angle, and uniformity have been measured. Due to the unique properties of I
II-nitride wide-band-gap semiconductors, microdisplays fabricated from III
nitrides can potentially provide unsurpassed performance, including high-br
ightness/resolution/contrast, high-temperature/high-power operation, high s
hock resistance, wide viewing angles, full-color spectrum capability, long
life, high speed, and low-power consumption, thus providing an enhancement
and benefit to the present capabilities of miniature display systems. (C) 2
001 American Institute of Physics.