Oriented crystallization of GaSb on a patterned, amorphous Si substrate

Oriented crystallization of GaSb on patterned, oxidized Si substrates was a chieved by metalorganic chemical vapor deposition. The Si substrate was for med by patterning an array of inverted square pyramids having {111} sidewal l facets, using lithography and anisotropic etching in KOH. The orientation and structure of GaSb crystals, at various stages of the growth, were exam ined by scanning electron microscopy and x-ray diffraction. X-ray diffracti on pole figure analysis shows that {111} planes of GaSb are predominantly p arallel to the {111} planes of the inverted pyramids. Extra (111) spots obs erved in the x-ray diffraction pole figure are interpreted in terms of mult iple twinning of GaSb. (C) 2001 American Institute of Physics.