Infrared extinction coefficient of LiNbO3 at temperatures to 1150 degrees C: Semiconductor behavior of a metal oxide at high temperature

Authors
Marin, C Ostrogorsky, AG Foulon, G Jundt, D Motakef, S
Citation
C. Marin et al., Infrared extinction coefficient of LiNbO3 at temperatures to 1150 degrees C: Semiconductor behavior of a metal oxide at high temperature, APPL PHYS L, 78(10), 2001, pp. 1379-1381
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
10
Year of publication
2001
Pages
1379 - 1381
Database
ISI
SICI code
0003-6951(20010305)78:10<1379:IECOLA>2.0.ZU;2-H
Abstract
The temperature dependence (up to 1150 degreesC) of transmittance of LiNbO3 in the 1.2-25-mum-wavelength range was measured and the extinction coeffic ient calculated. The transmittance of LiNbO3 in the 1.2-3.8-mum-transparent region decreases with increasing temperature. This reduction is explained through a semiconductor model, and related to the temperature dependence of intrinsic carriers in the conduction band. A simple equation is provided f or the extinction coefficient dependence on temperature and wavelength. (C) 2001 American Institute of Physics.