Citation
A. Passaseo et al., Wavelength control from 1.25 to 1.4 mu m in InxGa1-xAs quantum dot structures grown by metal organic chemical vapor deposition, APPL PHYS L, 78(10), 2001, pp. 1382-1384
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951
→ ACNP
Volume
78
Issue
10
Year of publication
2001
Pages
1382 - 1384
Database
ISI
SICI code
0003-6951(20010305)78:10<1382:WCF1T1>2.0.ZU;2-O
Abstract
This letter reports on the realization of long-wavelength InGaAs quantum do
ts (QDs) fabricated by metal organic chemical vapor deposition. By controll
ing the In incorporation in the QD layers and/or in the barrier embedding t
he QDs, we are able to tune the wavelength emission continuously from 1.25
to 1.4 mum at room temperature. Efficient stacking of dots emitting at 1.3
mum is also demonstrated. (C) 2001 American Institute of Physics.