Controlled photoluminescence in amorphous-silicon-nitride microcavities

Citation
A. Serpenguzel et S. Tanriseven, Controlled photoluminescence in amorphous-silicon-nitride microcavities, APPL PHYS L, 78(10), 2001, pp. 1388-1390
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
10
Year of publication
2001
Pages
1388 - 1390
Database
ISI
SICI code
0003-6951(20010305)78:10<1388:CPIAM>2.0.ZU;2-X
Abstract
Narrow-band and enhanced photoluminescence have been observed in hydrogenat ed amorphous-silicon-nitride microcavities. The distributed Bragg reflector s were fabricated using alternating layers of hydrogenated amorphous-silico n nitride and hydrogenated amorphous-silicon oxide. The microcavity resonan ce wavelength was designed to be at the maximum of the bulk hydrogenated am orphous-silicon-nitride luminescence spectrum. At the microcavity resonance , the photoluminescence amplitude is enhanced, while the photoluminescence linewidth is reduced with respect to the bulk hydrogenated amorphous-silico n nitride. (C) 2001 American Institute of Physics.