Recombination mechanisms in GaInNAs/GaAs multiple quantum wells

Authors
Kaschner, A Luttgert, T Born, H Hoffmann, A Egorov, AY Riechert, H
Citation
A. Kaschner et al., Recombination mechanisms in GaInNAs/GaAs multiple quantum wells, APPL PHYS L, 78(10), 2001, pp. 1391-1393
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
10
Year of publication
2001
Pages
1391 - 1393
Database
ISI
SICI code
0003-6951(20010305)78:10<1391:RMIGMQ>2.0.ZU;2-T
Abstract
Recombination processes in Ga1-xInxNyAs1-y/GaAs multiple quantum wells (MQW s) were investigated as function of the nitrogen molar fraction. We found a pronounced S-shaped behavior for the temperature-dependent shift of the ph otoluminescence emission similar to the ternary nitrides InGaN and AlGaN. T his is explained by exciton localization at potential fluctuations. Time-re solved measurements at 4 K reveal an increase of the decay time with decrea sing emission energy. A model based on lateral transfer processes to lower- energy states is proposed to explain this energy dependence. The formation of tail states in the Ga1-xInxNyAs1-y/GaAs MQWs is attributed to nitrogen f luctuations. (C) 2001 American Institute of Physics.