Strain effects and atomic arrangements of 60 degrees and 90 degrees dislocations near the ZnTe/GaAs heterointerface

Auger electron spectroscopy (AES) and secondary ion mass spectroscopy (SIMS ) measurements were carried out to characterize the composition of ZnTe fil ms, and transmission electron microscopy (TEM) measurements were performed to investigate the lattice mismatch and the microstructural properties of t he ZnTe/GaAs heterostructures. The AES and SIMS results showed that the ZnT e/GaAs heterointerfaces had relatively sharp interfaces. The TEM images and the selected-area electron-diffraction patterns showed a large lattice mis match between the ZnTe epitaxial layer and the GaAs substrate, 60 degrees a nd 90 degrees dislocations together with stacking faults, near the ZnTe/GaA s heterointerface. The ZnTe epitaxial film grown on the GaAs substrate rece ives a compressive strain of -0.61%, and possible atomic arrangements of th e 60 degrees and the 90 degrees dislocations are presented on the basis of the high-resolution TEM results. (C) 2001 American Institute of Physics.