Schottky contacts on amorphous carbon: A more reliable approach

It is considered impossible to form Schottky contacts on amorphous hydrogen ated carbon (a-C:H). Taking the lead from our earlier work in which we repo rt the formation of Schottky contacts on radio frequency plasma enhanced ch emical vapor deposition (rf PECVD) grown a-C:H films, here we present a way of confining the semiconductor-like parts of a-C:H to particular regions o f the films. Thus, the location and formation of Schottky contacts in a-C:H , are rendered more predictable. This was achieved by depositing a-C:H on m etal-patterned Si substrates. (C) 2001 American Institute of Physics.