Many-particle effects are investigated in the photoluminescence of type II
GaSb/GaAs quantum dots (QDs). With increasing excitation density, i.e., exc
iton occupation, the photoluminescence shows first a blueshift and then sat
urates developing a plateau region. The peculiar behavior is attributed to
Coulomb charging and state filling of the localized holes to dominate the m
any-particle regime. A high temperature stability makes the GaSb/GaAs QDs s
uitable for room-temperature devices. (C) 2001 American Institute of Physic
s.