Many-particle effects in type II quantum dots

Citation
L. Muller-kirsch et al., Many-particle effects in type II quantum dots, APPL PHYS L, 78(10), 2001, pp. 1418-1420
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
10
Year of publication
2001
Pages
1418 - 1420
Database
ISI
SICI code
0003-6951(20010305)78:10<1418:MEITIQ>2.0.ZU;2-2
Abstract
Many-particle effects are investigated in the photoluminescence of type II GaSb/GaAs quantum dots (QDs). With increasing excitation density, i.e., exc iton occupation, the photoluminescence shows first a blueshift and then sat urates developing a plateau region. The peculiar behavior is attributed to Coulomb charging and state filling of the localized holes to dominate the m any-particle regime. A high temperature stability makes the GaSb/GaAs QDs s uitable for room-temperature devices. (C) 2001 American Institute of Physic s.