Oxide nanostructures through self-assembly

Citation
S. Aggarwal et al., Oxide nanostructures through self-assembly, APPL PHYS L, 78(10), 2001, pp. 1442-1444
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
10
Year of publication
2001
Pages
1442 - 1444
Database
ISI
SICI code
0003-6951(20010305)78:10<1442:ONTS>2.0.ZU;2-L
Abstract
A prominent theme in inorganic materials research is the creation of unifor mly flat thin films and heterostructures over large wafers, which can subse quently be lithographically processed into functional devices. This letter proposes an approach that will lead to thin film topographies that are dire ctly counter to the above-mentioned philosophy. Recent years have witnessed considerable research activity in the area of self-assembly of materials, stimulated by observations of self-organized behavior in biological systems . We have fabricated uniform arrays of nonplanar surface features by a spon taneous assembly process involving the oxidation of simple metals, especial ly under constrained conditions on a variety of substrates, including glass and Si. In this letter we demonstrate the pervasiveness of this process th rough examples involving the oxidation of Pd, Cu, Fe, and In. The feature s izes can be controlled through the grain size and thickness of the starting metal thin film. Finally, we demonstrate how such submicron scale arrays c an serve as templates for the design and development of self-assembled, nan oelectronic devices. (C) 2001 American Institute of Physics.