Atmospheric pressure chemical vapour deposition of selenium films by KrF laser photolysis of dimethyl selenium

Authors
Pola, J Bastl, Z Subrt, J Ouchi, A
Citation
J. Pola et al., Atmospheric pressure chemical vapour deposition of selenium films by KrF laser photolysis of dimethyl selenium, APPL SURF S, 172(3-4), 2001, pp. 220-224
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
172
Issue
3-4
Year of publication
2001
Pages
220 - 224
Database
ISI
SICI code
0169-4332(20010315)172:3-4<220:APCVDO>2.0.ZU;2-L
Abstract
KrF laser-induced photolysis of gaseous dimethyl selenium in excess of heli um is controlled by cleavage of both Se-C bonds and affords ethane as a ver y dominant gaseous product together with elemental selenium, The photolysis mechanism being different from that of thermolysis shows potential for che mical vapour deposition of selenium films not contaminated with carbon impu rities. (C) 2001 Elsevier Science B.V. All rights reserved.