The electron emission characteristics of the Spindt-type Mo FEA device fabr
icated in this research are compared with numerical results. The authors pr
opose an area model of the chip used for the analysis of the model based on
the device structure. Further, by defining the factor psi in a broad sense
to enhance the numerical accuracy, adequate numerical results are obtained
. Various characteristics are simulated by the Fowler-Nordheim equation bas
ed on the experimental data. The results computed in accordance with the mo
del agree well with the experimental results based on SEM observation of th
e device. Hence, the tip radius of a device with fine sharpness can be esti
mated. (C) 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(3): 53-60, 200
1.