Emission characteristics of Spindt-type MoFEA using area model of analysis

Citation
Yc. Luo et al., Emission characteristics of Spindt-type MoFEA using area model of analysis, ELEC C JP 2, 84(3), 2001, pp. 53-60
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS
ISSN journal
8756663X → ACNP
Volume
84
Issue
3
Year of publication
2001
Pages
53 - 60
Database
ISI
SICI code
8756-663X(2001)84:3<53:ECOSMU>2.0.ZU;2-5
Abstract
The electron emission characteristics of the Spindt-type Mo FEA device fabr icated in this research are compared with numerical results. The authors pr opose an area model of the chip used for the analysis of the model based on the device structure. Further, by defining the factor psi in a broad sense to enhance the numerical accuracy, adequate numerical results are obtained . Various characteristics are simulated by the Fowler-Nordheim equation bas ed on the experimental data. The results computed in accordance with the mo del agree well with the experimental results based on SEM observation of th e device. Hence, the tip radius of a device with fine sharpness can be esti mated. (C) 2001 Scripta Technica, Electron Comm Jpn Pt 2, 84(3): 53-60, 200 1.