Dislocation-free Czochralski silicon crystal growth without dash necking

Dislocation-free silicon crystals which underwent boron and phosphorus dopi ng were grown by the Czochralski (CZ) method without Dash necking. The boro n concentration limit in a silicon seed 7 x 7 mm(2) in cross section withou t dislocations due to thermal shock was 1 x 10(18) atoms/cm(3) in ordinary CZ silicon-crystal growth. The maximum admissible discrepancy of boron conc entration in the seed and grown crystal was 7 x 10(18) atoms/cm(3) without dislocations due to lattice misfit in the grown crystal. Silicon seeds with a boron concentration of 3 x 10(18) atoms/cm(3) were used to grow CZ silic on crystals from lightly boron-doped (p-type) or phosphorus-doped (n-type) silicon melt, yielding dislocation-free silicon crystals without the need f or Dash necking. Heavily boron-doped silicon seed should thus be applicable in growing other practical lightly doped dislocation-free CZ-silicon cryst als without the need for Dash necking.