Temperature dependence of gate current and breakdown behaviors in an n(+)-GaAs/p(+)-InGaP/n(-)-GaAs high-barrier gate field-effect transistor

The temperature dependence of gate current and breakdown behavior in an n()-GaAs/p(+)-InGaP/n -GaAs high-barrier gate field-effect transistor has bee n studied and demonstrated. Due to the presence of an n(+)-GaAs/p(+)-InGaP/ n -GaAs high-barrier gate structure, the device shows high-breakdown charac teristics. In addition, we found that the off-state breakdown voltage BVDS is dominated by channel and gate breakdowns at T = 300 to 420 K, and gate c urrent I-G comes mainly from the tunneling mechanism within this temperatur e range. However, as the temperature is increased above 420 K, the lc; is s eriously affected by the substrate leakage current and BVDS is only dominat ed by gate breakdown.