Low-temperature plasma-enahanced chemical vapor deposition of crystal silicon film from dichlorosilane

Low temperature growth of hydrogenated chlorinated crystal silicon [muc-Si: H(Cl)] films from dichlorosilane (SiH2Cl2) by conventional rf glow discharg e (13.56 MHz) is investigated. The role of chlorine and hydrogen in crystal formation is discussed in terms of studies on gas phase and surface chemis try through film deposition, plasma diagnostics and in situ monitoring of t he surface reaction. The electron temperature in the SiH2Cl2/H-2 plasma sig nificantly depends on not only pressure but also substrate temperature. The surface termination species depend on substrate temperature and hydrogen n ow rate. The growing top surface is mainly terminated by chlorine as SiCln (n = 1, 2). Specific features of crystal formation at low temperatures from SiH2Cl2/H-2 plasma are demonstrated and compared with those from SiH4/H-2.