The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor

A complete study on the effects of indium channel implant energy on transis tor characteristics including carrier mobility, drain current, drain induce barrier lowering (DIBL), device breakdown, junction leakage, impact ioniza tion rate and hot-carrier degradation were performed on 0.1 mum devices. It was found that devices with super-steep-retrograde (SSR) indium channel pr ofile depict higher transconductance in linear region, albeit the saturatio n drive current is lower, compared to the conventional BF2-doped control. I n addition, In-doped devices also depict improved DIBL, I-on-I-off current ratio and transistor breakdown voltage. Finally, by increasing the indium i mplant energy, devices depict an improved transconductance, reduced DIBL an d hot-carrier degradation, while suffering larger junction leakage and capa citance.