Y. Takemura et J. Shirakashi, Planar-type ferromagnetic tunnel junctions fabricated by atomic force microscope for nonvolatile memory, JPN J A P 1, 40(1), 2001, pp. 128-129
A nonvolatile magnetic memory based on a planar-type ferromagnetic single e
lectron transistor is proposed. A sense signal dominated by a co-tunneling
current under Coulomb blockade enables a low-power operation of the memory.
The small tunnel junctions required for a room temperature operation of th
e device can be consisted of planar-type junctions fabricated by a nano-oxi
dation technique using atomic force microscope.