Planar-type ferromagnetic tunnel junctions fabricated by atomic force microscope for nonvolatile memory

A nonvolatile magnetic memory based on a planar-type ferromagnetic single e lectron transistor is proposed. A sense signal dominated by a co-tunneling current under Coulomb blockade enables a low-power operation of the memory. The small tunnel junctions required for a room temperature operation of th e device can be consisted of planar-type junctions fabricated by a nano-oxi dation technique using atomic force microscope.