We present a novel architecture for a quasi-four-level diode-pumped high-po
wer microchip laser. The design uses a Yb:YAG core surrounded by an undoped
YAG region of slab or disk shape, and that can be pumped from one side (un
symmetrical pumping) or from both slab sides (symmetrical pumping). Theoret
ical descriptions of the pumping optimization. pump-beam distribution, and
output-to-input power characteristics are presented. The simulations show t
hat from a composite Yb:YAG chip, which consists of a Yb:YAG core of 2.0-mm
diameter and 13.0-at.% Yb concentration surrounded by an undoped YAG slab
of 5.0-mm width and 0.8-mm thickness, a TEM00 output beam of 100W continuou
s-wave power could be obtained. The expected optical-to-optical efficiency
is 39%.