A 1550 nm single-photon detector using a thermoelectrically cooled InGaAs avalanche photodiode

Authors
Yoshizawa, A Tsuchida, H
Citation
A. Yoshizawa et H. Tsuchida, A 1550 nm single-photon detector using a thermoelectrically cooled InGaAs avalanche photodiode, JPN J A P 1, 40(1), 2001, pp. 200-201
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
40
Issue
1
Year of publication
2001
Pages
200 - 201
Database
ISI
SICI code
Abstract
We report a gated-mode single-photon detector sensitive to 1550nm radiation using a thermoelectrically cooled InGaAs avalanche photodiode. At the oper ation temperature of 238 K, we have obtained a quantum efficiency of 24.3% with a dark-count probability per gate of 9.4 x 10(-5).