Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films

Thin aluminum oxide (Al2O3) films were grown by the plasma-assisted atomic layer controlled deposition (PAALD) method using Dimethylethylamine alane [ (CH3)(2)(C2H5)N:AlH3] (DMEAA). Al was deposited by the PAALD method, then t he Al films were oxidized into Al2O3 by plasma oxidation in the same chambe r without breaking the vacuum. Al2O3 thin films of 15 nm thickness were pre pared by repetition of this process. Thus prepared Al2O3 thin films exhibit ed a refractive index of 1.68. The thickness and the refractive index fluct uation of the film over a 4 inch wafer were +/-2.3% and +/-1.9%, respective ly, for the deposited films. The leakage current density and breakdown fiel d were measured to be about 10(-8) A/cm(2) at 1 MV/cm and 7 MV/cm, respecti vely. Considerable improvement of the electrical properties was realized by the post oxygen-plasma annealing at 200 degreesC.