Fabrication of novel active resistor using selective metal organic chemical vapor deposition (MOCVD) for monolithic integration

Using selective epitaxial growth, we fabricated an active resistor in the f loated electron channel field effect transistor(FECFET) structure. Compared to the active resistor in the metal semiconductor FET(MESFET) structure, i t has large sheet resistance, depending on the number of stripes and etchin g time. For two SiO2 stripes, it is 600 Omega /w = 50 mum and for twenty Si O2 stripes, its sheet resistance can reach 6000 Omega/rectangle. Under ligh t illumination, its current increases nonlinearly with the input light powe r like two-terminal FET without a gate.