An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupleddelta-doping InP channel

Authors
Chen, YJ Chen, YW Lin, YS Yeh, CY Li, YJ Hsu, WC
Citation
Yj. Chen et al., An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupleddelta-doping InP channel, JPN J A P 2, 40(1AB), 2001, pp. L7-L9
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
40
Issue
1AB
Year of publication
2001
Pages
L7 - L9
Database
ISI
SICI code
Abstract
A coupled delta -doped In0.34Al0.66As0.85Sb0.15/InP heterostructure held-ef fect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 muA/mm at V-gs = -40V is achieved. The three-terminal on- and off-state br eakdown voltages are as high as 40,8 V and 16.1 V, respectively. These char acteristics are attributed to the use of the coupled delta -doped structure , InP channel, In0.34Al0.66As0.85Sb0.15 Schottky layer, and to the large co nduction-band discontinuity (DeltaE(C)) at the InAlAsSb/InP heterojunction. In addition, on- and off-state breakdown mechanisms in the InAlAsSb/InP HF ET are also studied.