Current density enhancement at active layer edges in polycrystalline silicon thin-film transistors

In polycrystalline silicon thin-film transistors, the electric field is con centrated- the carrier density is increased, and the current density is enh anced at active laver edges. This phenomenon is confirmed using the two-dim ensional (2-D) device simulation. Because of this phenomenon, the on-curren t is not proportional to the gate width. This dependence of the on-current on the gate width is confirmed using the 2-D device simulation and experime nt.