Direct bonding of epitaxial GaAs film on Si substrate with improved optical properties

In this Letter. we describe a new approach for the direct bonding of the ep itaxial GaAs film on a Si substrate. namely, a thick GaAs/Si him grown by m olecular-beam epitaxy (MBE) is transplanted onto another Si substrate on wh ich a thin GaAs film has been grown, by heating for Ih at 700 degreesC. A r eflection high-energy electron diffraction (RHEED) measurement from such a transplanted film indicates its: single-crystalline nature. The double-crys tal X-ray diffraction shows a full-width at half maximum (FWHM) of 481 arcs ec in the case of the as-transplanted sample and decreases to 254 arcsec wh en followed by thermal cycle annealing (TCA) repeated five times. Compared to the non transplanted film, the transplanted film exhibits very good phot oluminescence properties with very weak deep-level emission.