New technique for the thermal resistance measurement of power field effecttransistors using cathodoluminescence

Citation
Hm. Kim et al., New technique for the thermal resistance measurement of power field effecttransistors using cathodoluminescence, JPN J A P 2, 39(11A), 2000, pp. L1087-L1089
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
11A
Year of publication
2000
Pages
L1087 - L1089
Database
ISI
SICI code
Abstract
A new approach for measuring the thermal resistance of power field-effect t ransistors (FETs) with extremely high spatial resolution below 40 nm has be en demonstrated using cathodoluminescence generated by a low-energy electro n beam. The energy shift of the fundamental bandgap caused by the current h eating in the channel region is spatially probed, and is converted to the c hannel temperature using the temperature dependence of the material bandgap . The obtained thermal resistances of the GaAs metal semiconductor field ef fect transistor (MESFET) and the GaN MESFET are compared with those measure d by the conventional electrical technique.