Hm. Kim et al., New technique for the thermal resistance measurement of power field effecttransistors using cathodoluminescence, JPN J A P 2, 39(11A), 2000, pp. L1087-L1089
A new approach for measuring the thermal resistance of power field-effect t
ransistors (FETs) with extremely high spatial resolution below 40 nm has be
en demonstrated using cathodoluminescence generated by a low-energy electro
n beam. The energy shift of the fundamental bandgap caused by the current h
eating in the channel region is spatially probed, and is converted to the c
hannel temperature using the temperature dependence of the material bandgap
. The obtained thermal resistances of the GaAs metal semiconductor field ef
fect transistor (MESFET) and the GaN MESFET are compared with those measure
d by the conventional electrical technique.