Electronic states of InAs/GaAs quantum ring

In the framework of effective mass envelope function theory, the electronic states of the InAs/GaAs quantum ring are studied. Our model can be used to calculate the electronic states of quantum wells, quantum wires, and quant um dots. In calculations, the effects due to the different effective masses of electrons in rings and out rings are included. The energy levels of the electron are calculated in the different shapes of rings. The results indi cate that the inner radius of rings sensitively changes the electronic stat es. The energy levels of the electron are not sensitively dependent on the outer radius for large rings. If decreasing the inner and outer radii simul taneously, one may increase the energy spacing between energy levels and ke ep the ground state energy level unchanged. If changing one of two radii (i nner or outer radius), the ground state energy level and the energy spacing will change simultaneously. These results are useful for designing and fab ricating the double colors detector by intraband and interband translations . The single electron states are useful for studying the electron correlati ons and the effects of magnetic fields in quantum rings. Our calculated res ults are consistent with the recent experimental data of nanoscopic semicon ductor rings. (C) 2001 American Institute of Physics.