We present results that demonstrate how interfacial reactions between a met
al film and substrate during deposition affect microstructural evolution. I
n particular, we investigate Ti films deposited on amorphous SiO2 using ult
rahigh vacuum transmission electron microscopy. Ti films were deposited in
situ at room temperature and were examined using Auger electron spectroscop
y and transmission electron microscopy. An initial [hk0] preferred orientat
ion developed in films up to 2.5 nm in thickness. Films between 2.5 and 5.0
nm developed a [001] preferred orientation that persisted in films up to 2
0.0 nm thick. These data, in conjunction with Auger electron spectra and da
rk-field microscopy, suggest that growth of Ti films on SiO2 is directly af
fected by reactions at the Ti/SiO2 interface and that this reaction is resp
onsible for the observed change in preferred orientation. (C) 2001 American
Institute of Physics.